The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 06, 2018

Filed:

Jul. 31, 2017
Applicant:

Rohm and Haas Electronic Materials Cmp Holdings, Inc., Newark, DE (US);

Inventors:

Yi Guo, Newark, DE (US);

David Mosley, Lafayette Hill, PA (US);

Naresh Kumar Penta, Newark, DE (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
C09G 1/02 (2006.01); H01L 21/3105 (2006.01);
U.S. Cl.
CPC ...
C09G 1/02 (2013.01); H01L 21/31053 (2013.01);
Abstract

The present invention provides aqueous chemical mechanical planarization (CMP) polishing compositions that comprise a mixture of one or more surfactants chosen from an amine alkoxylate, an ammonium alkoxylate, or mixtures thereof, and colloidal silica particles having at least one cationic species, the colloidal silica particles being present in the amount of from 1 to 30 wt. %, as solids based on the total weight of the composition, and the compositions having a pH ranging from 2 to 6. The surfactants have a hydrophobic tail. The CMP polishing compositions exhibit tunable oxide:polysilicon and oxide:nitride removal rate ratios and reduce both silicon nitride and polysilicon removal rates significantly without significantly reducing dielectric (e.g. TEOS) removal rates.


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