The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 30, 2018

Filed:

Nov. 03, 2016
Applicant:

Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;

Inventors:

Wei-Li Huang, Pingtung County, TW;

Jheng-Jie Wong, Tainan, TW;

Hsiang-Sheng Su, Tainan, TW;

Tsung-Lung Huang, Tainan, TW;

Kuo-Chio Liu, Hsinchu, TW;

Hsin-Chieh Huang, Hsin-Chu, TW;

De-Dui Marvin Liao, Hsin-Chu, TW;

Chin-Yu Ku, Hsinchu, TW;

Chen-Shien Chen, Hsinchu County, TW;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 24/02 (2013.01); H01L 21/02334 (2013.01); H01L 24/03 (2013.01); H01L 24/05 (2013.01); H01L 24/42 (2013.01); H01L 2224/0236 (2013.01); H01L 2224/0239 (2013.01); H01L 2224/02235 (2013.01); H01L 2224/02251 (2013.01); H01L 2224/02255 (2013.01); H01L 2224/02311 (2013.01); H01L 2224/02313 (2013.01); H01L 2224/0381 (2013.01); H01L 2224/0401 (2013.01); H01L 2924/01022 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/0132 (2013.01);
Abstract

A method of fabricating a semiconductor structure includes: forming a conductive layer on a first insulating layer; etching a portion of the conductive layer to expose a portion of the first insulating layer; deforming a surface of the portion of the first insulating layer to form a rough surface of the first insulating layer; and removing a residue of the conductive layer on the rough surface of the first insulating layer.


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