The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 30, 2018

Filed:

Sep. 14, 2015
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Taichi Hirano, Miyagi, JP;

Ken Yoshida, Miyagi, JP;

Hikoichiro Sasaki, Miyagi, JP;

Satoshi Yamada, Miyagi, JP;

Yoshinobu Hayakawa, Miyagi, JP;

Junji Ishibashi, Miyagi, JP;

Fumitoshi Kumagai, Miyagi, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32146 (2013.01); H01J 37/32091 (2013.01); H01J 37/32165 (2013.01); H01J 37/32183 (2013.01); H01J 2237/04 (2013.01);
Abstract

A plasma processing apparatus can efficiently perform a pulse modulation method of switching a high frequency power to be used in a plasma process between a high level and a low level alternately according to a duty ratio of a modulation pulse. In this plasma processing apparatus, when performing a high/low pulse modulation on the high frequency power for plasma generation, if a weighted variable K is set to be 0.5<K<1, a constant reflection wave power PRis generated on a high frequency transmission line of a plasma generation system even during a pulse-on period T. Meanwhile, during a pulse-off period T, a reflection wave power PRdecreases. By adjusting the value of K, a balance between the reflection wave power PRduring the pulse-on period Tand the reflection wave power PRduring the pulse-off period Tcan be controlled.


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