The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 30, 2018
Filed:
Aug. 21, 2017
Lam Research Corporation, Fremont, CA (US);
Alexei Marakhtanov, Albany, CA (US);
Felix Kozakevich, Sunnyvale, CA (US);
Kenneth Lucchesi, Newark, CA (US);
John Patrick Holland, San Jose, CA (US);
Lam Research Corporation, Fremont, CA (US);
Abstract
An impedance matching circuit (IMC) is described. The IMC includes a first circuit that includes a first plurality of tuning elements defined along a path. The first circuit has an input coupled to a kilohertz (kHz) radio frequency (RF) generator. The first circuit is coupled to an output. The IMC further includes a second circuit having a second plurality of tuning elements. The second circuit has an input coupled to a megahertz (MHz) RF generator and is coupled to the output. The IMC includes a uniformity control circuit (UCC) defined from at least one of the plurality of tuning elements of the first circuit. The UCC is connected serially along the path of the first circuit to define a capacitance that at least partially influences a radial uniformity profile in an etch rate produced by a plasma chamber.