The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 30, 2018

Filed:

Mar. 04, 2016
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;

Inventors:

Ya-Ling Cheng, Yilan, TW;

Ching-Yu Chang, Hsin-Chu, TW;

Chien-Chih Chen, Taipei, TW;

Chun-Kuang Chen, Guanxi Township, TW;

Siao-Shan Wang, Tainan, TW;

Wei-Liang Lin, Hsin-Chu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/31 (2006.01); G03F 7/32 (2006.01); H01L 21/02 (2006.01); H01L 21/027 (2006.01); H01L 21/308 (2006.01); G03F 7/004 (2006.01); G03F 7/40 (2006.01); G03F 7/42 (2006.01);
U.S. Cl.
CPC ...
G03F 7/327 (2013.01); G03F 7/0046 (2013.01); G03F 7/322 (2013.01); G03F 7/325 (2013.01); G03F 7/40 (2013.01); G03F 7/405 (2013.01); G03F 7/425 (2013.01); H01L 21/0273 (2013.01); H01L 21/02118 (2013.01); H01L 21/02282 (2013.01); H01L 21/3086 (2013.01);
Abstract

A method includes forming a first layer over a substrate; forming a patterned photoresist layer over the first layer; applying a solution over the patterned photoresist layer to form a conformal layer over the pattern photoresist layer, wherein the conformal layer further includes a first portion over a top surface of the patterned photoresist layer and second portion extending along sidewalls of the patterned photoresist layer; selectively removing the first portion of the conformal layer formed over the top surface of the patterned photoresist layer; and selectively removing the patterned photoresist layer thereby leaving the second portion of the conformal layer.


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