The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 30, 2018

Filed:

Feb. 27, 2017
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Chen-Hau Wu, New Taipei, TW;

Wei-Han Lai, New Taipei, TW;

Ching-Yu Chang, Yuansun Village, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/039 (2006.01); G03F 7/16 (2006.01); G03F 7/40 (2006.01); G03F 7/038 (2006.01); G03F 7/30 (2006.01); G03F 7/32 (2006.01); G03F 7/004 (2006.01); G03F 7/20 (2006.01); G03F 7/38 (2006.01); H01L 21/027 (2006.01);
U.S. Cl.
CPC ...
G03F 7/038 (2013.01); G03F 7/0045 (2013.01); G03F 7/039 (2013.01); G03F 7/16 (2013.01); G03F 7/168 (2013.01); G03F 7/2041 (2013.01); G03F 7/30 (2013.01); G03F 7/325 (2013.01); G03F 7/38 (2013.01); G03F 7/40 (2013.01); H01L 21/0274 (2013.01);
Abstract

A photoresist with a group which will decompose bonded to a high etching resistance moiety is provided. Alternatively, the group which will decompose can additionally be attached to a re-attachment group that will re-attach to the polymer after the group which will decompose has cleaved from the polymer. The photoresist may also comprise a non-leaving monomer with a cross-linking site and a cross-linking agent.


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