The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 23, 2018
Filed:
Apr. 15, 2016
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7851 (2013.01); H01L 29/0649 (2013.01); H01L 29/0688 (2013.01);
Abstract
A FinFET including a substrate, a plurality of insulators and a gate stack is provided. The substrate comprises a plurality of trenches and at least one semiconductor fin between the trenches, wherein the semiconductor fin comprises at least one groove, and the at least one groove is located on a top surface of the semiconductor fin. The insulators are disposed in the trenches. The gate stack partially covers the semiconductor fin, the at least one groove and the insulators.