The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 23, 2018
Filed:
Jun. 05, 2017
Applicant:
Qualcomm Incorporated, San Diego, CA (US);
Inventors:
Gengming Tao, San Diego, CA (US);
Bin Yang, San Diego, CA (US);
Xia Li, San Diego, CA (US);
Miguel Miranda Corbalan, San Diego, CA (US);
Assignee:
QUALCOMM Incorporated, San Diego, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/73 (2006.01); H01L 29/737 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 29/66 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7371 (2013.01); H01L 29/0696 (2013.01); H01L 29/0817 (2013.01); H01L 29/1004 (2013.01); H01L 29/66242 (2013.01);
Abstract
A heterojunction bipolar transistor unit cell may include a compound semiconductor substrate. The heterojunction bipolar transistor unity may also include a base mesa on the compound semiconductor substrate. The base mesa may include a collector region on the compound semiconductor substrate and a base region on the collector region. The heterojunction bipolar transistor unity may further include a single emitter mesa on the base mesa.