The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 09, 2018
Filed:
Jan. 23, 2017
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Jiun-Lei Jerry Yu, Hsinchu County, TW;
Fu-Wei Yao, Hsinchu, TW;
Chen-Ju Yu, Yilan County, TW;
Chun-Wei Hsu, Hsinchu, TW;
King-Yuen Wong, Tuen Mun, HK;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A circuit structure includes a substrate, a III-V semiconductor compound over the substrate, a AlGaN (AlGaN) layer over the III-V semiconductor compound, a gate over the AlGaN layer, a passivation film over the gate and over a portion of the AlGaN layer, a source structure, and a drain structure on an opposite side of the gate from the source structure, wherein X ranges from 0.1 to 1. The source structure has a source contact portion and an overhead portion. The overhead portion is over at least a portion of the passivation film between the source contact portion and the gate. A distance between the source contact portion and the gate is less than a distance between the gate and the drain structure.