The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 09, 2018
Filed:
Jul. 10, 2015
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Inventors:
Wun-Jie Lin, Hsin-Chu, TW;
Bo-Ting Chen, Fengyuan, TW;
Jen-Chou Tseng, Jhudong Township, TW;
Ming-Hsiang Song, Shin-Chu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/02 (2006.01); H01L 27/24 (2006.01); H01L 29/66 (2006.01); H01L 29/861 (2006.01); H01L 27/06 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0255 (2013.01); H01L 27/2409 (2013.01); H01L 29/66136 (2013.01); H01L 29/861 (2013.01); H01L 27/0629 (2013.01);
Abstract
A method comprises forming an active region including a first fin and a second fin over a substrate, wherein the first fin and the second fin are separated by an isolation region, depositing an epitaxial growth block layer over the active region, patterning the epitaxial growth block layer to define a first growth area and a second growth area and growing an N+ region in the first growth area and a P+ region in the second growth area.