The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 09, 2018

Filed:

Feb. 22, 2017
Applicant:

Advanced Semiconductor Engineering, Inc., Kaohsiung, TW;

Inventors:

Chih Cheng Lee, Kaohsiung, TW;

Yuan-Chang Su, Kaohsiung, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/498 (2006.01); H01L 23/31 (2006.01); H01L 21/48 (2006.01); H01L 21/683 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 23/49838 (2013.01); H01L 21/486 (2013.01); H01L 21/4857 (2013.01); H01L 21/6835 (2013.01); H01L 23/3128 (2013.01); H01L 23/49822 (2013.01); H01L 23/49827 (2013.01); H01L 23/49894 (2013.01); H01L 24/17 (2013.01); H01L 2221/68345 (2013.01); H01L 2221/68359 (2013.01); H01L 2224/16113 (2013.01); H01L 2224/16227 (2013.01); H01L 2924/0665 (2013.01); H01L 2924/07025 (2013.01); H01L 2924/1579 (2013.01); H01L 2924/15311 (2013.01); H01L 2924/15747 (2013.01); H01L 2924/186 (2013.01);
Abstract

A substrate includes a first dielectric structure, a first circuit layer, a second dielectric structure and a second circuit layer. The first circuit layer is embedded in the first dielectric structure, and does not protrude from a first surface of the first dielectric structure. The second dielectric structure is disposed on the first surface of the first dielectric structure. The second circuit layer is embedded in the second dielectric structure, and is electrically connected to the first circuit layer. A first surface of the second circuit layer is substantially coplanar with a first surface of the second dielectric structure, and a surface roughness value of a first surface of the first circuit layer is different from a surface roughness value of the first surface of the second circuit layer.


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