The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 02, 2018

Filed:

Jul. 03, 2017
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Chun-Wai Ng, Hsinchu, TW;

Hsueh-Liang Chou, Jhubei, TW;

Po-Chih Su, New Taipei, TW;

Ruey-Hsin Liu, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/40 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/36 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/401 (2013.01); H01L 29/0684 (2013.01); H01L 29/36 (2013.01); H01L 29/404 (2013.01); H01L 29/407 (2013.01); H01L 29/66704 (2013.01); H01L 29/7824 (2013.01); H01L 29/7825 (2013.01); H01L 29/7856 (2013.01);
Abstract

An integrated circuit device includes a pad layer having a body portion with a first doping type laterally adjacent to a drift region portion with a second doping type, a trench formed in the pad layer, the trench extending through an interface of the body portion and the drift region portion, a gate formed in the trench and over a top surface of the pad layer along the interface of the body portion and the drift region portion, an oxide formed in the trench on opposing sides of the gate, and a field plate embedded in the oxide on each of the opposing sides of the gate.


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