The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 02, 2018
Filed:
Sep. 25, 2013
Walid M. Hafez, Portland, OR (US);
Chia-hong Jan, Portland, OR (US);
Jeng-ya D. Yeh, Portland, OR (US);
Hsu-yu Chang, Hillsboro, OR (US);
Neville Dias, Hillsboro, OR (US);
Chanaka Munasinghe, Hillsboro, OR (US);
Chia-Hong Jan, Portland, OR (US);
Walid M Hafez, Portland, OR (US);
Jeng-Ya David Yeh, Portland, OR (US);
Hsu-Yu Chang, Hillsboro, OR (US);
Neville L Dias, Hillsboro, OR (US);
Chanaka D Munasinghe, Hillsboro, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
An impurity source film is formed along a portion of a non-planar semiconductor fin structure. The impurity source film may serve as source of an impurity that becomes electrically active subsequent to diffusing from the source film into the semiconductor fin. In one embodiment, an impurity source film is disposed adjacent to a sidewall surface of a portion of a sub-fin region disposed between an active region of the fin and the substrate and is more proximate to the substrate than to the active area. In further embodiments, the impurity source film may provide a source of dopant that renders the sub-fin region complementarily doped relative to a region of the substrate forming a P/N junction that is at least part of an isolation structure electrically isolating the active fin region from a region of the substrate.