The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 25, 2018
Filed:
Aug. 17, 2017
Micron Technology, Inc., Boise, ID (US);
Jie Li, Boise, ID (US);
James Mathew, Boise, ID (US);
Kunal Shrotri, Boise, ID (US);
Luan C. Tran, Meridian, ID (US);
Gordon A. Haller, Boise, ID (US);
Yangda Zhang, Singapore, SG;
Hongpeng Yu, Singapore, SG;
Minsoo Lee, Boise, ID (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
Some embodiments include an integrated structure having a first opening extending through a stack of alternating insulative levels and conductive levels. A nitride structure is within the first opening and narrows the first opening to form a second opening. Detectable oxide is between the nitride structure and one or more of the conductive levels. Some embodiments include an integrated structure having a conductive material, a select device gate material over the conductive material, and vertically-stacked conductive levels over the select device gate material. A first opening extends through the vertically-stacked levels to the conductive material and has opposing sidewalls along a cross-section. Nitride liners are along the sidewalls of the first opening. Detectable oxide is between at least one of the nitride liners and one or more of the vertically-stacked conductive levels. Some embodiments include methods for forming integrated structures.