The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 25, 2018
Filed:
Apr. 24, 2017
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Chen-Liang Liao, Taichung, TW;
Chia-Yao Liang, Tainan, TW;
Jui-Long Chen, Taichung, TW;
Sheng-Yuan Lin, Hsinchu, TW;
Yi-Lii Huang, Zhubei, TW;
Kuo-Hsi Lee, Taichung, TW;
Po-An Chen, Taichung, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A method of forming a semiconductor structure includes; (i) forming an isolation structure in a semiconductor substrate, the isolation structure electrically isolating device regions of the semiconductor substrate; (ii) forming a gate structure extending from one of the device regions to the isolation structure; (iii) forming a resist protective oxide layer overlaying the gate structure and the isolation structure; and (iv) patterning the resist protective oxide layer to form a patterned resist protective oxide that covers at least a portion of the isolation structure and a portion of the gate structure on the isolation structure.