The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 25, 2018
Filed:
Nov. 14, 2017
Applicant:
Tokyo Electron Limited, Minato-ku, Tokyo, JP;
Inventors:
Sergey A. Voronin, Glenmont, NY (US);
Jason Marion, Glenville, NY (US);
Alok Ranjan, Austin, TX (US);
Assignee:
Tokyo Electron Limited, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32302 (2013.01); H01J 37/32082 (2013.01); H01J 37/32238 (2013.01); H01J 37/32293 (2013.01);
Abstract
Described herein is a technology related to a method for utilizing a dual-frequency surface wave plasma sources to provide stable ionizations on a plasma processing system. Particularly, the dual-frequency surface wave plasma sources may include a primary surface wave power plasma source and a secondary power plasma source, which is provided on each recess of a plurality of recesses. The secondary power plasma source, for example, may provide the stable ionization on the plasma processing system.