The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 25, 2018

Filed:

Feb. 13, 2017
Applicant:

Kla-tencor Corporation, Milpitas, CA (US);

Inventors:

David Shortt, Los Gatos, CA (US);

Steven Lange, Alamo, CA (US);

Junwei Wei, Milpitas, CA (US);

Daniel Kapp, Pleasanton, CA (US);

Charles Amsden, Mountain View, CA (US);

Assignee:

KLA-Tencor Corporation, Milpitas, CA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G01N 1/44 (2006.01); G01N 21/95 (2006.01); G01N 21/88 (2006.01); G01N 1/28 (2006.01);
U.S. Cl.
CPC ...
G01N 21/8851 (2013.01); G01N 1/286 (2013.01); G01N 1/44 (2013.01); G01N 21/8806 (2013.01); G01N 21/9501 (2013.01);
Abstract

Methods and systems for accurately locating buried defects previously detected by an inspection system are described herein. A physical mark is made on the surface of a wafer near a buried defect detected by an inspection system. In addition, the inspection system accurately measures the distance between the detected defect and the physical mark in at least two dimensions. The wafer, an indication of the nominal location of the mark, and an indication of the distance between the detected defect and the mark are transferred to a material removal tool. The material removal tool (e.g., a focused ion beam (FIB) machining tool) removes material from the surface of the wafer above the buried defect until the buried defect is made visible to an electron-beam based measurement system. The electron-beam based measurement system is subsequently employed to further analyze the defect.


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