The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 18, 2018
Filed:
Nov. 28, 2016
United Microelectronics Corp., Hsin-Chu, TW;
Tri-Rung Yew, Hsinchu, TW;
Hung-Chan Lin, Tainan, TW;
Li-Wei Feng, Kaohsiung, TW;
Chien-Ting Ho, Taichung, TW;
Chia-Lung Chang, Tainan, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
A method of fabricating a metal-insulator-metal capacitor includes providing a dielectric layer. The dielectric layer is etched to form a first hole including a first convex profile bulging into the dielectric layer. Subsequently, the dielectric layer is etched to form a second hole including a second convex profile bulging into the dielectric layer. A first metal layer is formed to conformally cover the capacitor trench. An insulating layer is formed to cover the first metal layer. Finally, a second metal layer is formed covering the insulating layer.