The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 18, 2018
Filed:
Sep. 01, 2017
United Microelectronics Corp., Hsinchu, TW;
Ko-Wei Lin, Taichung, TW;
Ying-Lien Chen, Chiayi, TW;
Chun-Ling Lin, Tainan, TW;
Huei-Ru Tsai, Kaohsiung, TW;
Hung-Miao Lin, Yunlin County, TW;
Sheng-Yi Su, Kaohsiung, TW;
Tzu-Hao Liu, Taichung, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A method is provided for forming copper material over a substrate. The method includes forming a barrier layer over a substrate. Then, a depositing-soaking-treatment (DST) process is performed over the barrier layer. A copper layer is formed on the cobalt layer. The DST process includes depositing a cobalt layer on the barrier layer. Then, the cobalt layer is soaked with Hgas at a first pressure. The cobalt layer is treated with a Hplasma at a second pressure. The second pressure is lower than the first pressure.