The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 18, 2018

Filed:

Jun. 24, 2015
Applicants:

Tsinghua University, Beijing, CN;

Hon Hai Precision Industry Co., Ltd., New Taipei, TW;

Inventors:

Da-Ming Zhuang, Beijing, CN;

Ming Zhao, Beijing, CN;

Ming-Jie Cao, Beijing, CN;

Li Guo, Beijing, CN;

Shi-Lu Zhan, Beijing, CN;

Xiao-Long Li, Beijing, CN;

Assignees:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 14/34 (2006.01); B28B 3/00 (2006.01); C23C 14/08 (2006.01); H01J 37/34 (2006.01);
U.S. Cl.
CPC ...
C23C 14/3414 (2013.01); B28B 3/00 (2013.01); C23C 14/08 (2013.01); H01J 37/3414 (2013.01); H01J 37/3426 (2013.01); H01J 37/3429 (2013.01); H01J 37/3491 (2013.01);
Abstract

A sputtering target includes an indium cerium zinc oxide represented by InCeZnO, wherein x=0.5˜2. A method for making a sputtering target includes steps of: mixing indium oxide (InO) powder, cerium oxide (CeO) powder, and zinc oxide (ZnO) powder to form a mixture, a molar ratio of indium (In), cerium (Ce), and zinc (Zn) as In:Ce:Zn in the mixture is 2:(0.5 to 2):1; and sintering the mixture at a temperature in a range from about 1250° C. to about 1650° C.


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