The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 04, 2018
Filed:
May. 12, 2017
United Microelectronics Corp., Hsin-Chu, TW;
Fujian Jinhua Integrated Circuit Co., Ltd., Quanzhou, Fujian province, CN;
Tsung-Ying Tsai, Kaohsiung, TW;
Chien-Ting Ho, Taichung, TW;
Ming-Te Wei, Changhua County, TW;
Li-Wei Feng, Kaohsiung, TW;
Ying-Chiao Wang, Changhua County, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Fujian Jinhua Integrated Circuit Co., Ltd., Quanzhou, Fujian Province, CN;
Abstract
A dynamic random access memory (DRAM) includes a substrate, two buried word lines and a bit line contact. The substrate includes a first active area, wherein the first active area extends along a first direction. The buried word lines are disposed in the substrate and across the first active area, wherein the buried word lines extend along a second direction. The bit line contact is disposed on the substrate and overlaps the first active area between the two buried word lines, wherein the bit line contact is enclosed by a first side, a second side, a third side and a fourth side, and the first side is parallel to the third side along a third direction while the second side is parallel to the fourth side along a fourth direction, wherein the third direction is parallel to the first direction and the fourth direction is parallel to the second direction.