The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 04, 2018

Filed:

Jun. 20, 2017
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Hiroyuki Toshima, Nirasaki, JP;

Tatsuo Hatano, Nirasaki, JP;

Shinji Furukawa, Nirasaki, JP;

Naoki Watanabe, Nirasaki, JP;

Naoyuki Suzuki, Nirasaki, JP;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/48 (2006.01); H01L 21/768 (2006.01); H01L 21/687 (2006.01); H01J 37/32 (2006.01); H01J 37/34 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76862 (2013.01); H01J 37/32715 (2013.01); H01J 37/32733 (2013.01); H01J 37/32899 (2013.01); H01J 37/3435 (2013.01); H01L 21/68764 (2013.01); H01L 21/76802 (2013.01); H01L 21/76843 (2013.01); H01L 21/76871 (2013.01); H01L 21/76879 (2013.01);
Abstract

There is provided a method for performing a pre-treatment to form a copper wiring in a recess formed in a substrate, which includes forming a barrier layer on a surface of the substrate that defines the recess, and forming a seed layer on the barrier layer. The method further includes at least one of etching the barrier layer and etching the seed layer. In the at least one of etching the barrier layer and etching the seed layer, the substrate is inclined with respect to an irradiation direction of ions while rotating the substrate.


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