The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 28, 2018
Filed:
Jun. 01, 2017
United Microelectronics Corp., Hsin-Chu, TW;
Fujian Jinhua Integrated Circuit Co., Ltd., Quanzhou, Fujian Province, CN;
Feng-Yi Chang, Tainan, TW;
Shih-Fang Tzou, Tainan, TW;
Yu-Cheng Tung, Kaohsiung, TW;
Ming-Feng Kuo, Tainan, TW;
Li-Chiang Chen, Tainan, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Fujian Jinhua Integrated Circuit Co., Ltd., Quanzhou, Fujian Province, CN;
Abstract
A method for fabricating semiconductor device includes the steps of: forming a first trench and a second trench in a substrate; forming a first work function metal layer in the first trench and the second trench; forming a patterned mask to cover the second trench; removing the first work function metal layer from the first trench; forming a second work function metal layer in the first trench and the second trench; and forming a conductive layer in the first trench and the second trench to form a first gate structure and a second gate structure.