The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 28, 2018
Filed:
Jan. 27, 2017
Applicant:
Hermes Microvision Inc., Hsinchu, TW;
Inventors:
Weiming Ren, San Jose, CA (US);
Xuedong Liu, San Jose, CA (US);
Xuerang Hu, San Jose, CA (US);
Zhongwei Chen, San Jose, CA (US);
Assignee:
HERMES MICROVISION INC., Hsinchu, TW;
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/06 (2006.01); H01J 37/147 (2006.01); H01J 37/28 (2006.01); H01J 37/22 (2006.01); H01J 37/145 (2006.01); G01N 23/2251 (2018.01);
U.S. Cl.
CPC ...
H01J 37/06 (2013.01); G01N 23/2251 (2013.01); H01J 37/145 (2013.01); H01J 37/1474 (2013.01); H01J 37/226 (2013.01); H01J 37/28 (2013.01); G01N 2223/418 (2013.01); G01N 2223/6116 (2013.01); H01J 2237/2817 (2013.01);
Abstract
A new multi-beam apparatus with a total FOV variable in size, orientation and incident angle, is proposed. The new apparatus provides more flexibility to speed the sample observation and enable more samples observable. More specifically, as a yield management tool to inspect and/or review defects on wafers/masks in semiconductor manufacturing industry, the new apparatus provide more possibilities to achieve a high throughput and detect more kinds of defects.