The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 21, 2018

Filed:

Nov. 27, 2017
Applicant:

Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;

Inventors:

Tsung-Han Tsai, Miaoli County, TW;

Volume Chien, Tainan, TW;

Yung-Lung Hsu, Tainan, TW;

Chung-Bin Tseng, Tainan, TW;

Keng-Ying Liao, Tainan, TW;

Po-Zen Chen, Tainan, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01); H01L 23/48 (2006.01); H01L 21/768 (2006.01); H01L 27/06 (2006.01); H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
H01L 23/481 (2013.01); H01L 21/76831 (2013.01); H01L 21/76898 (2013.01); H01L 21/76805 (2013.01); H01L 21/76832 (2013.01); H01L 27/0688 (2013.01); H01L 27/14634 (2013.01); H01L 2224/24147 (2013.01); H01L 2224/8203 (2013.01); H01L 2924/0002 (2013.01);
Abstract

The present disclosure provides a semiconductor structure. The structure includes a first substrate; a first dielectric layer having a first surface in proximity to the first substrate and a second surface away from the first substrate; a first interconnect penetrating the first surface of the first dielectric layer; and a protection layer extending along a portion of a sidewall of the first interconnect. A thickness of the protection layer is in a range of from about 0.02 μm to about 0.2 μm.


Find Patent Forward Citations

Loading…