The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 14, 2018
Filed:
Dec. 12, 2016
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Chien-Chih Chen, Hsinchu, TW;
Su-Yu Yeh, Hsinchu, TW;
Tzu-Shin Chen, Tainan, TW;
Mu-Han Cheng, Tainan, TW;
Chun-Hai Huang, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A semiconductor device and a method for fabricating the semiconductor device are provided. In the method for fabricating the semiconductor device, at first, a dielectric layer is provided. Then, trenches are formed in the dielectric layer. Thereafter, the trenches are filled with spacer material to form a spacer structure in the dielectric layer for defining pixel regions. Then, lens structures are formed on the pixel regions. Each of the lens structures includes a first curved lens layer, a second curved lens layer and a curved color filter layer. The curved color filter layer is disposed on the second curved lens layer or between the first curved lens layer and the second curved lens layer.