The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 14, 2018
Filed:
Feb. 01, 2016
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Hoi-Tou Ng, Hsinchu, TW;
Kuei-Liang Lu, Hsinchu, TW;
Ming-Feng Shieh, Tainan County, TW;
Ru-Gun Liu, Hsinchu County, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsin-Chu, TW;
Abstract
A method for patterning fins for FinFET devices are disclosed. The method includes forming elongated protrusions on a semiconductor substrate and forming a mask covering a first portion of the elongated protrusions. The method further includes forming a spacer surrounding the mask. The mask and the spacer together cover a second portion of the elongated protrusions. The method further includes removing a portion of the elongated protrusions not covered by the mask and the spacer. In an embodiment, an outer boundary of the spacer and the mask corresponds to an outer boundary of a non-rectangular pattern.