The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 07, 2018

Filed:

Jul. 31, 2017
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Chao-Ching Chang, Kaohsiung, TW;

Sheng-Chan Li, Tainan, TW;

Cheng-Hsien Chou, Tainan, TW;

Tsung-Wei Huang, Taichung, TW;

Min-Hui Lin, Tainan, TW;

Yi-Ming Lin, Tainan, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 27/146 (2006.01); H01L 21/02 (2006.01); H01L 21/3105 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1463 (2013.01); H01L 21/0228 (2013.01); H01L 21/02274 (2013.01); H01L 21/31053 (2013.01); H01L 27/1464 (2013.01); H01L 27/14621 (2013.01); H01L 27/14627 (2013.01); H01L 27/14629 (2013.01); H01L 27/14685 (2013.01);
Abstract

A method for forming an image sensor device is provided. The method includes providing a substrate having a front surface and a back surface. The method includes removing a first portion of the substrate to form a first trench. The method includes forming a first isolation structure in the first trench. The first isolation structure has a top surface. The method includes removing a second portion of the first isolation structure and a third portion of the substrate to form a second trench passing through the first isolation structure and extending into the substrate. The method includes forming a second isolation structure in the second trench. The method includes forming a light-sensing region in the substrate. The method includes removing a fourth portion of the substrate to expose a first bottom portion of the second isolation structure and a backside of the light-sensing region.


Find Patent Forward Citations

Loading…