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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10042258 B1

PDFFull Text
Date of Patent:
Aug. 07, 2018

Filed:

Jul. 23, 2015

Composition for forming a resist upper-layer film and method for producing a semiconductor device using the composition

Applicant:

Nissan Chemical Industries, Ltd., Tokyo, JP;

Inventors:

Noriaki Fujitani, Toyama, JP;

Takafumi Endo, Toyama, JP;

Rikimaru Sakamoto, Toyama, JP;

Assignee:

NISSAN CHEMICAL INDUSTRIES, LTD., Tokyo, JP;

Attorney:

Oliff PLC

Primary Examiner:

Amanda C Walke

Int. Cl.
CPC ...
G03F 7/004 (2006.01); G03F 7/11 (2006.01); G03F 7/20 (2006.01); G03F 7/16 (2006.01); G03F 7/38 (2006.01); G03F 7/32 (2006.01); G03F 7/40 (2006.01); G03F 7/038 (2006.01); G03F 7/039 (2006.01); C09D 161/06 (2006.01); C09D 125/16 (2006.01); H01L 21/027 (2006.01); G03F 7/09 (2006.01); C08F 220/22 (2006.01); C08F 220/18 (2006.01); C08F 220/30 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
G03F 7/11 (2013.01); C08F 220/18 (2013.01); C08F 220/22 (2013.01); C08F 220/30 (2013.01); C09D 125/16 (2013.01); C09D 161/06 (2013.01); G03F 7/038 (2013.01); G03F 7/039 (2013.01); G03F 7/091 (2013.01); G03F 7/094 (2013.01); G03F 7/162 (2013.01); G03F 7/168 (2013.01); G03F 7/2004 (2013.01); G03F 7/2037 (2013.01); G03F 7/322 (2013.01); G03F 7/38 (2013.01); G03F 7/40 (2013.01); H01L 21/0274 (2013.01); H01L 21/31111 (2013.01);
Abstract

This composition for forming an extreme-ultraviolet (EUV) or electron-beam upper-layer resist film including (a) a polymer (P) and (b) a solvent, the solvent containing 1 to 13 mass % of a C4-12 ketone compound with respect to the entire solvent, is used in the lithography process of a procedure for manufacturing a semiconductor device. Without needing to be intermixed with a resist, and particularly on the occasion of EUV exposure, the composition for forming an EUV or electron-beam upper-layer resist film blocks undesirable exposure light, e.g., ultraviolet (UV) or deep ultraviolet (DUV) rays, and selectively transmits only the EUV rays, and can be developed using a developing solution after exposure.

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