The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 31, 2018
Filed:
Oct. 31, 2016
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Shu-Hao Huang, Taichung, TW;
Horng-Huei Tseng, HsinChu, TW;
Chi-Ming Yang, Hsinchu, TW;
Jeng-Jyi Hwang, Chu-Tong Township, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
The present disclosure relates to a method of forming a CMP slurry that is free of pH-adjusters (i.e., chemicals added solely for the purpose of adjusting a pH of a CMP slurry), and an associated a pH-adjuster free CMP slurry. In some embodiments, the method is performed by forming a CMP slurry having a first pH value. A desired pH value of the CMP slurry is determined. A chelating agent configured to bond to metallic ions is provided to the CMP slurry. The chelating agent is configured to adjust a pH value of the CMP slurry from the first pH value to the desired pH value. By using the chelating agent to adjust a pH value of the CMP slurry to achieve a desired pH value, the method is able to form a CMP slurry that is free of pH-adjusters, thereby reducing the cost and complexity of the CMP slurry.