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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10032644 B1

PDFFull Text
Date of Patent:
Jul. 24, 2018

Filed:

May. 27, 2016

Barrier chemical mechanical planarization slurries using ceria-coated silica abrasives

Applicant:

Air Products and Chemicals, Inc., Allentown, PA (US);

Inventors:

Xiaobo Shi, Chandler, AZ (US);

James Allen Schlueter, Phoenix, AZ (US);

Mark Leonard O'Neill, Queen Creek, AZ (US);

Dnyanesh Chandrakant Tamboli, Gilbert, AZ (US);

Assignee:

VERSUM MATERIALS US, LLC, Tempe, AZ (US);

Attorney:

Lina Yang

Primary Examiner:

Roberts Culbert

Int. Cl.
CPC ...
C09K 13/02 (2006.01); H01L 21/321 (2006.01); C09G 1/02 (2006.01); H01L 21/67 (2006.01); C09K 3/14 (2006.01); H01L 21/3105 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3212 (2013.01); C09G 1/02 (2013.01); C09K 3/1463 (2013.01); H01L 21/31053 (2013.01); H01L 21/67075 (2013.01); H01L 21/67092 (2013.01);
Abstract

Chemical Mechanical Planarization (CMP) polishing compositions comprising composite particles, such as ceria coated silica particles, offer tunable polishing removal selectivity values between different films. Compositions enable high removal rates on interconnect metal and the silicon oxide dielectric while providing a polish stop on low-K dielectrics, a-Si and tungsten films. Chemical Mechanical Planarization (CMP) polishing compositions have shown excellent performance using soft polishing pad.

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