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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10026736 B1

PDFFull Text
Date of Patent:
Jul. 17, 2018

Filed:

Dec. 20, 2016

Semiconductor devices and methods of manufacturing the same

Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Sung-Hyun Choi, Suwon-si, KR;

Yong-Suk Tak, Seoul, KR;

Gi-Gwan Park, Hwaseong-si, KR;

Bon-Young Koo, Suwon-si, KR;

Ki-Yeon Park, Hwaseong-si, KR;

Won-Oh Seo, Incheon, KR;

Assignee:

Samsung Electronics Co., Ltd., Gyeonggi-do, KR;

Attorney:

Harness, Dickey & Pierce, P.L.C.

Primary Examiner:

Benjamin Sandvik

Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 27/088 (2006.01); H01L 21/02 (2006.01); H01L 21/8234 (2006.01); H01L 23/26 (2006.01); H01L 29/08 (2006.01); H01L 29/16 (2006.01); H01L 29/161 (2006.01); H01L 29/165 (2006.01); H01L 29/78 (2006.01); H01L 21/8238 (2006.01); H01L 27/092 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0886 (2013.01); H01L 21/02636 (2013.01); H01L 21/823418 (2013.01); H01L 21/823431 (2013.01); H01L 21/823437 (2013.01); H01L 21/823814 (2013.01); H01L 21/823821 (2013.01); H01L 21/823864 (2013.01); H01L 23/26 (2013.01); H01L 27/0924 (2013.01); H01L 29/0847 (2013.01); H01L 29/16 (2013.01); H01L 29/161 (2013.01); H01L 29/165 (2013.01); H01L 29/1608 (2013.01); H01L 29/6656 (2013.01); H01L 29/66545 (2013.01); H01L 29/66636 (2013.01); H01L 29/7848 (2013.01); H01L 29/7851 (2013.01);
Abstract

A semiconductor device includes an active fin on a substrate, a gate structure on the active fin, a gate spacer structure on a sidewall of the gate structure, and a source/drain layer on at least a portion of the active fin adjacent the gate spacer structure. The gate spacer structure includes a wet etch stop pattern, an oxygen-containing silicon pattern, and an outgassing prevention pattern sequentially stacked.

Find Patent Forward Citations

Choi, Sung-Hyun. (2018). Semiconductor devices and methods of manufacturing the same (U.S. Patent No. 10026736). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10026736

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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