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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10018920 B1

PDFFull Text
Date of Patent:
Jul. 10, 2018

Filed:

Mar. 04, 2016

Lithography patterning with a gas phase resist

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;

Inventors:

Shu-Hao Chang, Taipei, TW;

Kuo-Chang Kau, Miaoli County, TW;

Kevin Huang, Hsinchu, TW;

Jeng-Horng Chen, Hsin-chu, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsin-Chu, TW;

Attorney:

Haynes and Boone, LLP

Primary Examiner:

Amanda C Walke

Int. Cl.
CPC ...
G03F 7/004 (2006.01); G03F 7/11 (2006.01); G03F 7/20 (2006.01); G03F 7/16 (2006.01); G03F 7/38 (2006.01); G03F 7/40 (2006.01); B05D 1/00 (2006.01); B05D 3/06 (2006.01); H01L 21/027 (2006.01); H01L 21/311 (2006.01); H01L 21/687 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
G03F 7/70341 (2013.01); B05D 1/60 (2013.01); B05D 3/06 (2013.01); B05D 3/061 (2013.01); B05D 3/068 (2013.01); G03F 7/11 (2013.01); G03F 7/167 (2013.01); G03F 7/2004 (2013.01); G03F 7/38 (2013.01); G03F 7/40 (2013.01); G03F 7/70325 (2013.01); H01L 21/0271 (2013.01); H01L 21/0274 (2013.01); H01L 21/0277 (2013.01); H01L 21/02118 (2013.01); H01L 21/02277 (2013.01); H01L 21/31111 (2013.01); H01L 21/31133 (2013.01); H01L 21/31144 (2013.01); H01L 21/687 (2013.01); H01L 21/68764 (2013.01);
Abstract

Disclosed is a method for lithography patterning. The method includes providing a substrate, forming a deposition enhancement layer (DEL) over the substrate, and flowing an organic gas near a surface of the DEL. During the flowing of the organic gas, the method further includes irradiating the DEL and the organic gas with a patterned radiation. Elements of the organic gas polymerize upon the patterned radiation, thereby forming a resist pattern over the DEL. The method further includes etching the DEL with the resist pattern as an etch mask, thereby forming a patterned DEL.

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