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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10017850 B1

PDFFull Text
Date of Patent:
Jul. 10, 2018

Filed:

Jul. 25, 2014

Cu—ga alloy sputtering target, and method for producing same

Applicant:

Mitsubishi Materials Corporation, Tokyo, JP;

Inventors:

Yuuki Yoshida, Naka-gun, JP;

Kouichi Ishiyama, Saitama, JP;

Satoru Mori, Okegawa, JP;

Assignee:

MITSUBISHI MATERIALS CORPORATION, Tokyo, JP;

Attorney:

Locke Lord LLP

Primary Examiner:

Rodney G McDonald

Int. Cl.
CPC ...
C23C 14/34 (2006.01); C22C 9/00 (2006.01); C22C 1/04 (2006.01); C22C 32/00 (2006.01); B22F 3/16 (2006.01); B22F 5/00 (2006.01); C23C 14/14 (2006.01); H01J 37/34 (2006.01);
U.S. Cl.
CPC ...
C23C 14/3414 (2013.01); B22F 3/16 (2013.01); B22F 5/00 (2013.01); C22C 1/0425 (2013.01); C22C 9/00 (2013.01); C22C 32/00 (2013.01); C23C 14/14 (2013.01); H01J 37/3429 (2013.01); B22F 2201/01 (2013.01); B22F 2301/10 (2013.01); B22F 2302/45 (2013.01); B22F 2303/01 (2013.01); B22F 2303/15 (2013.01); B22F 2304/10 (2013.01);
Abstract

The present invention provides a sputtering target of a Cu—Ga sintered body in which the oxygen content is further reduced and the abnormal discharging can be suppressed, and a method for producing the same. The sputtering target according to the present invention is a sintered body having: a texture in which Na compound phases are dispersed in a matrix with a γ phase and a ζ phase of a Cu—Ga alloy; and a component composition made of: 20 atomic % to 30 atomic % of Ga; 0.05 atomic % to 10 atomic % of Na; and the Cu balance and inevitable impurities including elements other than Na in the Na compound, wherein an average grain size of the γ phase is 30 μm to 100 μm, and an average grain size of the Na compound phases is equal to or less than 8.5 μm.

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