The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 03, 2018

Filed:

May. 08, 2017
Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Lei Sun, Altamont, NY (US);

Wenhui Wang, San Jose, CA (US);

Xunyuan Zhang, Albany, NY (US);

Ruilong Xie, Niskayuna, NY (US);

Jia Zeng, Sunnyvale, CA (US);

Xuelian Zhu, San Jose, CA (US);

Min Gyu Sung, Latham, NY (US);

Shao Beng Law, Watervliet, NY (US);

Assignee:

GLOBALFOUNDRIES INC., Grand Cayman, KY;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/088 (2006.01); H01L 29/66 (2006.01); H01L 21/027 (2006.01); H01L 21/8234 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0886 (2013.01); H01L 21/0274 (2013.01); H01L 21/823431 (2013.01); H01L 29/6681 (2013.01);
Abstract

One aspect of the disclosure is directed to a method of forming an integrated circuit structure. The method may include: providing a set of fins over a semiconductor substrate, the set of fins including a plurality of working fins and a plurality of dummy fins, the plurality of dummy fins including a first subset of dummy fins within a pre-defined distance from any of the plurality of working fins, and a second subset of dummy fins beyond the pre-defined distance from any of the plurality of working fins; removing the first subset of dummy fins by an extreme ultraviolet (EUV) lithography technique; and removing at least a portion of the second subset of dummy fins.


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