The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 26, 2018

Filed:

Sep. 18, 2014
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventors:

Ming-Hsi Yeh, Hsinchu, TW;

Sung-Hsun Wu, Kaohsiung, TW;

Chao-Cheng Chen, Hsin-Chu, TW;

Syun-Ming Jang, Hsin-Chu, TW;

Bo-Wei Chou, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B08B 3/00 (2006.01); C11D 7/06 (2006.01); C11D 7/08 (2006.01); C11D 11/00 (2006.01); H01L 21/02 (2006.01); H01L 21/67 (2006.01); C11D 3/39 (2006.01);
U.S. Cl.
CPC ...
C11D 7/06 (2013.01); C11D 3/3947 (2013.01); C11D 7/08 (2013.01); C11D 11/0047 (2013.01); H01L 21/02057 (2013.01); H01L 21/67051 (2013.01);
Abstract

A method of cleaning a substrate such as semiconductor substrate for IC fabrication is described that includes cleaning the semiconductor substrate with a first mixture of ozone and one of an acid and a base, followed by a second mixture of ozone and the other one of the acid and the base. The cleaning mixtures may further include de-ionized water. In an embodiment, the mixture is sprayed onto a heated substrate surface. The acid may be HF; the base may be NHOH.


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