The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 19, 2018

Filed:

Oct. 27, 2014
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd, Hsin-Chu, TW;

Inventors:

Tai-I Yang, Hsinchu, TW;

Yu-Chieh Liao, Taoyuan, TW;

Tien-Lu Lin, Hsinchu, TW;

Tien-I Bao, Dayuan Township, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 23/522 (2006.01); H01L 23/485 (2006.01); H01L 29/417 (2006.01); H01L 29/78 (2006.01); H01L 21/768 (2006.01); H01L 23/532 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5226 (2013.01); H01L 21/76816 (2013.01); H01L 21/76831 (2013.01); H01L 21/76879 (2013.01); H01L 21/76885 (2013.01); H01L 21/76897 (2013.01); H01L 23/485 (2013.01); H01L 29/41758 (2013.01); H01L 29/7833 (2013.01); H01L 23/53228 (2013.01); H01L 23/53257 (2013.01); H01L 29/665 (2013.01); H01L 29/7848 (2013.01); H01L 2924/0002 (2013.01);
Abstract

A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate. The semiconductor device structure includes a first dielectric layer over the semiconductor substrate. The semiconductor device structure includes a first conductive line embedded in the first dielectric layer. The semiconductor device structure includes a second dielectric layer over the first dielectric layer and the first conductive line. The semiconductor device structure includes a second conductive line over the second dielectric layer. The second dielectric layer is between the first conductive line and the second conductive line. The semiconductor device structure includes conductive pillars passing through the second dielectric layer to electrically connect the first conductive line to the second conductive line. The conductive pillars are spaced apart from each other.


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