The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 19, 2018
Filed:
Aug. 08, 2014
Carl Zeiss Smt Gmbh, Oberkochen, DE;
Boris Bittner, Roth, DE;
Norbert Wabra, Werneck, DE;
Sonja Schneider, Oberkochen, DE;
Ricarda Maria Schoemer, Zusmarshausen, DE;
Hendrik Wagner, Aalen, DE;
Christian Wald, Aalen, DE;
Rumen Iliew, Oberkochen, DE;
Thomas Schicketanz, Aalen, DE;
Toralf Gruner, Aalen-Hofen, DE;
Walter Pauls, Huettlingen, DE;
Holger Schmidt, Aalen, DE;
Matthias Roesch, Aalen, DE;
Carl Zeiss SMT GmbH, Oberkochen, DE;
Abstract
A film element of an EUV-transmitting wavefront correction device is arranged in a beam path and includes a first layer of first layer material having a first complex refractive index n=(1−δ)+iß, with a first optical layer thickness, which varies locally over the used region in accordance with a first layer thickness profile, and a second layer of second layer material having a second complex refractive index n=(1−δ)+iß, with a second optical layer thickness, which varies locally over the used region in accordance with a second layer thickness profile. The first and second layer thickness profiles differ. The deviation δof the real part of the first refractive index from 1 is large relative to the absorption coefficient ßof the first layer material and the deviation δof the real part of the second refractive index from 1 is small relative to the absorption coefficient ßof the second layer material.