Zunkai Huang

Title: Zunkai Huang and Photodiode Innovation

Introduction

Zunkai Huang is an inventor based in Shanghai, China, whose patent work addresses photodiode design and the efficient movement of photogenerated carriers. The supplied information identifies the Chinese Academy of Sciences as his organization.

Latest Patents

Huang is associated with 1 patent: “Photodiode Structure, Preparation Method and Circuit Structure.” The invention describes a photodiode with a substrate, functional doping area, surface doping area, and auxiliary doping area. Its non-uniformly doped functional area creates a potential difference that guides and accelerates photogenerated carriers toward a transport gate and subsequent circuitry. The loop-shaped auxiliary doping area increases the charge-receiving area, helping collect transported carriers more quickly and improve transport efficiency.

Career Highlights

The patent reflects Huang’s work on semiconductor device structures and methods for improving carrier collection and transfer. The available information does not provide further details about his career history or other inventions.

Collaborations

Huang’s listed coworkers include Quanze Li and Hui Wang. The supplied information does not specify their roles in the patent or the nature of their collaboration.

Conclusion

Zunkai Huang’s documented patent focuses on a photodiode structure designed to guide photogenerated carriers and improve their collection and transport.