Daejeon, South Korea

Zin-Sig Kim

This inventor holds 3 USPTO granted patents. Top assignee: Electronics and Telecommunications Research Institute. Active years: 2017-2020.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Zin-Sig Kim. Retrieved from https://idiyas.com/inventor/zin-sig-kim-rybg5utm

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 3.9

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2017-2020

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3 patents (USPTO):Explore Patents

Title: Innovations of Zin-Sig Kim in Semiconductor Technology

Introduction

Zin-Sig Kim is a prominent inventor based in Daejeon, South Korea. He has made significant contributions to the field of semiconductor technology, holding three patents that showcase his innovative approach to device fabrication. His work is primarily associated with the Electronics and Telecommunications Research Institute, where he collaborates with other experts in the field.

Latest Patents

One of Zin-Sig Kim's latest patents is a semiconductor device and method for fabricating the same. This method involves sequentially laminating a separation layer and a first substrate layer on a sacrificial substrate. It also includes forming a heat dissipation plate with distinct regions, removing the sacrificial substrate, and patterning the first substrate layer to create a first substrate that exposes the heat dissipation plate. Additionally, the method outlines the formation of conductive pads and a first line connecting these pads to the first element, culminating in the creation of a second element on the conductive pads.

Another notable patent by Kim is also focused on a semiconductor device and its fabrication method. This invention features a heat dissipation plate with a first and second region, where a first element is placed in the first region and a second element in the second region. The first element includes a first substrate, while the second element has a second substrate made from different materials. The first substrate contacts the heat dissipation plate, and the second element is bonded to it using a flip-chip bonding technique.

Career Highlights

Zin-Sig Kim's career is marked by his dedication to advancing semiconductor technology. His work at the Electronics and Telecommunications Research Institute has positioned him as a key figure in the development of innovative semiconductor devices. His patents reflect a deep understanding of the complexities involved in semiconductor fabrication and heat management.

Collaborations

Zin-Sig Kim has collaborated with notable colleagues such as Hyung Seok Lee and Sung-Bum Bae. These partnerships have fostered a collaborative environment that enhances the research and development of cutting-edge semiconductor technologies.

Conclusion

Zin-Sig Kim's contributions to semiconductor technology through his innovative patents demonstrate his expertise and commitment to advancing the field. His work continues to influence the development of efficient and effective semiconductor devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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