Zi-Ying Li

Title: Innovations of Zi-Ying Li in Photodiode Technology

Introduction

Zi-Ying Li is a notable inventor based in New Taipei, Taiwan. He has made significant contributions to the field of photodiode technology, particularly with his innovative designs that enhance the functionality and efficiency of these devices.

Latest Patents

Zi-Ying Li holds a patent for a lateral avalanche photodiode structure. This invention includes a substrate, a PN diode, and a metal layer. The substrate features at least one first electrode area, one light receiving area, and one second electrode area arranged horizontally. The first electrode area serves as an avalanche area, while the light receiving area is positioned between the first and second electrode areas. The PN diode is integrated into the substrate within the first electrode area. The metal layer is strategically placed on the substrate, covering the first and second electrode areas but leaving the light receiving area exposed.

Career Highlights

Zi-Ying Li is affiliated with National Central University, where he continues to advance his research and development in photodiode technology. His work has garnered attention for its potential applications in various fields, including telecommunications and imaging systems.

Collaborations

Zi-Ying Li collaborates with esteemed colleagues such as Yue-Ming Hsin and Fang-Ping Chou, contributing to a dynamic research environment that fosters innovation and discovery.

Conclusion

Zi-Ying Li's contributions to the field of photodiode technology exemplify the impact of innovative thinking in advancing electronic devices. His patent for the lateral avalanche photodiode structure showcases his commitment to enhancing the efficiency and functionality of photonic applications.