The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 21, 2013
Filed:
Sep. 22, 2011
Yue-ming Hsin, Tainan, TW;
Fang-ping Chou, New Taipei, TW;
Zi-ying LI, New Taipei, TW;
Ching-wen Wang, Changhua County, TW;
Yue-Ming Hsin, Tainan, TW;
Fang-Ping Chou, New Taipei, TW;
Zi-Ying Li, New Taipei, TW;
Ching-Wen Wang, Changhua County, TW;
National Central University, Taoyuan, TW;
Abstract
A lateral avalanche photodiode structure including a substrate, a PN diode and a metal layer is provided. The substrate has at least one first electrode area, at least one light receiving area, and at least one second electrode area which are arranged horizontally. The first electrode area is also an avalanche area, and the light receiving area is between the first electrode area and the second electrode area. The PN diode is disposed in the substrate in the first electrode area. The metal layer is disposed on the substrate and covers the first electrode area and the second electrode area, but does not cover the light receiving area.