Zhuqing Huang

Title: Innovations of Zhuqing Huang in 3D Memory Devices

Introduction

Zhuqing Huang is a notable inventor based in Wuhan, China. He has made significant contributions to the field of memory technology, particularly in the development of methods for forming channel holes in three-dimensional memory devices. His innovative approach has the potential to enhance the efficiency and performance of memory storage solutions.

Latest Patents

Zhuqing Huang holds a patent titled "Method for forming channel hole in three-dimensional memory device using nonconformal sacrificial layer." This patent describes embodiments of methods for forming channel holes in 3D memory devices using a nonconformal sacrificial layer. In this method, a dielectric stack is formed on a substrate, which includes interleaved first and second dielectric layers. An opening is created that extends vertically through the dielectric stack. A nonconformal sacrificial layer is then formed along the sidewall of the opening, resulting in a decrease in the diameter of the opening. After removing the nonconformal sacrificial layer and part of the dielectric stack, a channel structure is formed in the opening.

Career Highlights

Zhuqing Huang is currently employed at Yangtze Memory Technologies Co., Ltd. His work at this company focuses on advancing memory technology and developing innovative solutions for 3D memory devices. His expertise and contributions have positioned him as a key figure in the industry.

Collaborations

Zhuqing Huang has collaborated with notable colleagues, including Baoyou Chen and Weihua Cheng. These collaborations have fostered a productive environment for innovation and development in memory technology.

Conclusion

Zhuqing Huang's contributions to the field of 3D memory devices exemplify the importance of innovation in technology. His patent and work at Yangtze Memory Technologies Co., Ltd. highlight his role as a significant inventor in the industry.