Taizhou, China

Zhiyou Deng

This inventor holds 1 USPTO granted patent. Top assignees: Chinese Academy of Sciences, Taizhou University. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Zhiyou Deng. Retrieved from https://idiyas.com/inventor/zhiyou-deng

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Zhiyou Deng and His Underground Engineering Support Invention.

Introduction

Zhiyou Deng is an inventor associated with Taizhou, China. His listed patent concerns a fabricated buffer-layer support structure for underground engineering.

Latest Patents

Deng’s listed patent is “Fabricated Underground Engineering Buffer Layer Support Structure.” It describes first and second structural plates positioned between an initial support layer and a secondary lining layer. A flexible energy-dissipation component occupies the space between the plates and combines a wave-shaped plastic plate with surrounding porous, lightweight material.

The component can be installed in single or multiple layers at the arch ring, inverted arch, and arch foot. Its thickness, as well as the strength and density of the porous material, can be varied to suit design requirements. Deng is credited with 1 patent.

Career Highlights

The supplied information associates Deng with Taizhou University and the Chinese Academy of Sciences. These affiliations provide context for his professional background, though specific roles or dates were not provided.

Collaborations

Chaoxuan Zhang and Xianjun Tan are identified as Deng’s coworkers. The available information does not specify their roles in the patent or the nature of their collaboration.

Conclusion

Zhiyou Deng’s listed invention focuses on a configurable, energy-dissipating buffer structure for underground engineering, with design options intended to accommodate different structural locations and requirements.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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