Zhiyong Wang

Title: Zhiyong Wang: Innovator in Silicon-on-Insulator Technology

Introduction

Zhiyong Wang is a prominent inventor based in Wuxi New District, China. He has made significant contributions to the field of semiconductor technology, particularly in the development of silicon-on-insulator devices. His innovative work has led to advancements that enhance the performance and reliability of electronic components.

Latest Patents

Zhiyong Wang holds 1 patent for his invention titled "Silicon-on-insulator device and intermetallic dielectric layer structure thereof and manufacturing method." This patent describes an intermetallic dielectric layer structure that includes a silicon-rich oxide layer covering a metal interconnect, a fluorine-silicon glass layer, and a non-doped silicate glass layer. The design of the silicon-rich oxide layer, which has a thickness of 700 angstroms ±10%, effectively captures movable ions, preventing them from passing through and causing potential damage to the device. This invention demonstrates excellent performance in evaluating the integrity of the gate oxide layer.

Career Highlights

Zhiyong Wang is currently employed at CSMC Technologies Fab1 Co., Ltd., where he continues to push the boundaries of semiconductor technology. His work focuses on improving the manufacturing processes and material properties of silicon-on-insulator devices, contributing to the advancement of the electronics industry.

Collaborations

Zhiyong Wang collaborates with talented colleagues, including Dejin Wang and Jingjing Ma. Their combined expertise fosters an environment of innovation and creativity, leading to groundbreaking developments in their field.

Conclusion

Zhiyong Wang's contributions to silicon-on-insulator technology exemplify his dedication to innovation in the semiconductor industry. His patented inventions not only enhance device performance but also pave the way for future advancements in electronic components.