Company Filing History:
Years Active: 2021
Title: Zhirong Zhang: Innovator in Silicon Carbide Technology
Introduction
Zhirong Zhang is a prominent inventor based in Shijiazhuang, China. He has made significant contributions to the field of semiconductors, particularly through his innovative methods for enhancing silicon carbide epitaxial layers. His work is crucial for advancing semiconductor technology and improving device fabrication processes.
Latest Patents
Zhirong Zhang holds a patent titled "Method for Passivating Silicon Carbide Epitaxial Layer." This patent describes a method that involves introducing a carbon source and a silicon source into a reaction chamber to grow a silicon carbide epitaxial layer on a substrate. Following this, the carbon source is turned off, and a nitrogen source along with a silicon source is introduced to grow a silicon nitride thin film on the upper surface of the silicon carbide epitaxial layer. The resulting silicon nitride thin film is characterized by its high quality and low defect density, making it suitable for use as a lower dielectric layer in gate electrodes of field effect transistors. This method eliminates the need for an additional oxidation process to form a SiO dielectric layer, thereby streamlining device fabrication procedures.
Career Highlights
Zhirong Zhang is affiliated with the 13th Research Institute of China Electronics, where he continues to push the boundaries of semiconductor technology. His innovative approach to passivating silicon carbide epitaxial layers has positioned him as a key figure in the research and development of advanced semiconductor materials.
Collaborations
Zhirong Zhang has collaborated with notable colleagues, including Jia Li and Weili Lu. Their combined expertise contributes to the advancement of semiconductor technologies and the successful implementation of innovative methods in their research.
Conclusion
Zhirong Zhang's contributions to the field of semiconductors, particularly through his patented method for passivating silicon carbide epitaxial layers, highlight his role as an influential inventor. His work not only enhances the quality of semiconductor devices but also simplifies the fabrication process, paving the way for future innovations in the industry.