Zhinyuan Cheng

Title: Zhinyuan Cheng: Innovator in Semiconductor Technology

Introduction

Zhinyuan Cheng is a notable inventor based in Lincoln, MA (US). He has made significant contributions to the field of semiconductor technology, particularly in the formation of devices such as solar cells. His innovative approaches have garnered attention in the industry.

Latest Patents

Zhinyuan Cheng holds a patent for the "Formation of devices by epitaxial layer overgrowth." This patent outlines methods and structures for creating devices on substrates that include lattice-mismatched materials. The method involves forming an opening in a masking layer over a substrate with a first semiconductor material. A first layer of a second semiconductor material, which is lattice-mismatched to the first, is formed within this opening. The first layer extends above the top surface of the masking layer. A second layer of the same second semiconductor material is then formed on the first layer and over part of the masking layer. The patent emphasizes that the vertical growth rate of the first layer is greater than its lateral growth rate, while the lateral growth rate of the second layer exceeds its vertical growth rate.

Career Highlights

Zhinyuan Cheng is currently employed at Taiwan Semiconductor Manufacturing Company Ltd. His work focuses on advancing semiconductor technologies and improving device fabrication processes. His innovative methods have the potential to enhance the efficiency and performance of various electronic devices.

Collaborations

Zhinyuan Cheng has collaborated with notable colleagues, including Jennifer M. Hydrick and Jizhong Li. These collaborations have contributed to the development of cutting-edge technologies in the semiconductor industry.

Conclusion

Zhinyuan Cheng is a prominent figure in semiconductor innovation, with a focus on epitaxial layer overgrowth techniques. His contributions are paving the way for advancements in device fabrication and efficiency.