Zhikun Liu

Title: Zhikun Liu: Innovator in GaN-HEMT Technology

Introduction

Zhikun Liu is a prominent inventor based in Guangzhou, China. He has made significant contributions to the field of semiconductor technology, particularly in the development of GaN-HEMT devices. His innovative work has led to the filing of a patent that showcases his expertise and creativity in this area.

Latest Patents

Zhikun Liu holds a patent for a GaN-HEMT device with a sandwich structure and a method for preparing the same. This device includes an epitaxial layer and electrodes, where the epitaxial layer consists of a GaN channel layer and an AlGaN barrier layer, arranged from top to bottom. The electrodes feature a gate electrode, a source electrode, a drain electrode, and a field plate electrode. Notably, the field plate electrode extends beyond the epitaxial layer and connects with the gate electrode, forming the unique sandwich structure. This innovative design enhances the performance of the GaN-HEMT device.

Career Highlights

Zhikun Liu is affiliated with the South China University of Technology, where he continues to advance his research and development efforts. His work in the field of semiconductor devices has garnered attention and respect from peers and industry professionals alike.

Collaborations

Zhikun Liu has collaborated with notable colleagues, including Guoqiang Li and Dingbo Chen. These partnerships have contributed to the advancement of technology and innovation in their respective fields.

Conclusion

Zhikun Liu's contributions to GaN-HEMT technology exemplify his dedication to innovation and excellence in semiconductor research. His patent and ongoing work at the South China University of Technology highlight his role as a leading inventor in this critical area of technology.