The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 09, 2024
Filed:
May. 15, 2019
South China University of Technology, Guangzhou, CN;
Guoqiang Li, Guangzhou, CN;
Dingbo Chen, Guangzhou, CN;
Zhikun Liu, Guangzhou, CN;
Lijun Wan, Guangzhou, CN;
SOUTH CHINA UNIVERSITY OF TECHNOLOGY, Guangzhou, CN;
Abstract
A GaN-HEMT device with a sandwich structure and a method for preparing the same are provided. The GaN-HEMT device includes an epitaxial layer and electrodes, wherein the epitaxial layer includes a GaN channel layer () and an AlGabarrier layer (), and is arranged from top to bottom; the electrodes include a gate electrode (), a source electrode (), a drain electrode () and a field plate electrode (), wherein the field plate electrode () and the gate electrode () are respectively fabricated on an upper surface and a lower surface of the epitaxial layer, and the field plate electrode () extends to a region beyond the epitaxial layer and is connected with the gate electrode () to form the sandwich structure, and the source electrode () and the drain electrode () are respectively located at two ends of the epitaxial layer.