Lijun Wan

Title: Lijun Wan: Innovator in GaN-HEMT Technology

Introduction

Lijun Wan is a prominent inventor based in Guangzhou, China. He has made significant contributions to the field of semiconductor technology, particularly in the development of GaN-HEMT devices. His innovative work has led to the filing of a patent that showcases his expertise and creativity in this area.

Latest Patents

Lijun Wan holds a patent for a GaN-HEMT device with a sandwich structure and a method for preparing the same. This device includes an epitaxial layer and electrodes, where the epitaxial layer consists of a GaN channel layer and an AlGaN barrier layer. The design features a unique sandwich structure that enhances the performance of the device. The electrodes include a gate electrode, a source electrode, a drain electrode, and a field plate electrode, with the field plate electrode extending beyond the epitaxial layer and connecting with the gate electrode.

Career Highlights

Lijun Wan is affiliated with the South China University of Technology, where he continues to advance his research in semiconductor technologies. His work has garnered attention for its innovative approach and practical applications in the industry.

Collaborations

Lijun Wan has collaborated with notable colleagues, including Guoqiang Li and Dingbo Chen, who contribute to his research endeavors and enhance the collaborative spirit within their projects.

Conclusion

Lijun Wan's contributions to GaN-HEMT technology exemplify the spirit of innovation in the semiconductor field. His patent reflects a significant advancement that could influence future developments in electronic devices.